TFT array substrate and manufacturing method thereof

US9647012B1 · kind B1 · utility

Assignee

• WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN

Inventor

• Bo Liang · Maoming, CN

Key dates

• Filing date: May 22, 2016
• Grant date: May 9, 2017
• Expiry date: May 22, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

The present disclosure provides a TFT array substrate and manufacturing method thereof, forming a class structure of graphene-like two-dimensional layered semiconductor material on a base substrate and transferring the class structure of graphene-like two-dimensional layered semiconductor material on the designated position of the soft substrate to be a semiconductor active layer of the array substrate, therefore the semiconductor active layer of the TFT array substrate of the present disclosure uses a class structure of graphene-like two-dimensional layered semiconductor material to makes the array substrate having the advantage of higher electron mobility and mechanical property, excellent flexural resistance and reducing thickness of the substrate greatly.