TFT and manufacturing method thereof, array substrate and manufacturing method thereof, X-ray detector and display device
US9647019B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 17, 2014 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Jul 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3′), a semiconductor-layer thin film (4′) and a passivation-shielding-layer thin film (5′) successively; forming a pattern (5′) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a′); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c′) and a drain electrode (4b′). The source electrode (4c′) and the drain electrode (4b′) are disposed on two sides of the active layer (4a′) respectively and in a same layer as the active layer (4a′). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.