Capacitor 3D-cell and 3D-capacitor structure
US9647057B2 · kind B2 · utility
6Cited by
4References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 13, 2016 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Jul 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
Abstract
A capacitor 3D-cell formed on a silicon substrate is designed for producing low equivalent serial resistance and high capacitor surface-density. It combines a trench capacitor structure, multiple contact pads to at least one of the electrodes and a track which connects the electrode through the multiple contact pads so as to bypass said electrode between trench portions which are located apart from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.