Metal oxide semiconductor transistor
US9647138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2012 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | May 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6756
Abstract
A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.