Patent · US Active

Optoelectronic semiconductor chip

US9647174B2 · kind B2 · utility

1Cited by

3References

4Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Joachim Hertkorn · Neukirchen, DE
Karl Engl · Niedergebraching, DE
Berthold Hahn · Hemau, DE
Andreas Weimar · Regensburg, DE

Key dates

Filing date	Apr 14, 2016
Grant date	May 9, 2017
Priority date	—
Expiry date	Apr 14, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 μm is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.