Memory device, comprising at least one element and associated method spintronics
US9653136B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Aug 1, 2014 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Aug 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage device, comprising at least one spintronic element suitable for representing a state among at least n states associated with the spintronic element, n>1, characterized in that each of the n states is associated with at least one characteristic of a group of magnetic skyrmions in the spintronic element, and in that said characteristic associated with a state n oi is different from said characteristic associated with a state n oj when the states n oi and n oj are two different states among the n states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.