Patent · US Active

Gallium nitride nanowire based electronics

US9653286B2 · kind B2 · utility

19Cited by

14References

11Claims

0Family size

Assignee

HEXAGEM AB · SE

Inventors

Jonas Ohlsson · Malmö, SE
Mikael Bjork · Lomma, SE

Key dates

Filing date	Feb 12, 2013
Grant date	May 16, 2017
Priority date	—
Expiry date	Feb 12, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/411
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.