Thermal processing by transmission of mid infra-red laser light through semiconductor substrate
US9653298B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2013 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Nov 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Thermal processing is performed by transmission of mid infra-red laser light through a substrate such as a semiconductor substrate with a limited mid infra-red transmission range. The laser light is generated by a rare-earth-doped fiber laser and is directed through the substrate such that the transmitted power is capable of altering a target material at a back side region of the substrate, for example, on or spaced from the substrate. The substrate may be sufficiently transparent to allow the transmitted mid infra-red laser light to alter the target material without altering the material of the substrate. In one example, the rare-earth-doped fiber laser is a high average power thulium fiber laser operating in a continuous wave (CW) mode and in a 2 μm spectral region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.