Method for forming crystalline cobalt silicide film
US9653306B2 · kind B2 · utility
1Cited by
7References
16Claims
0Family size
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Key dates
| Filing date | Dec 22, 2010 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Sep 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.