Method of cleaning, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9653326B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2013 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Feb 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of cleaning an interior of a process chamber by supplying a cleaning gas into the process chamber after a process of forming a thin film on a substrate in the process chamber is performed, including alternately repeating changing a pressure in the process chamber from a first pressure range to a second pressure range, and changing the pressure in the process chamber from the second pressure range to the first pressure range. In this method, when the pressure in the process chamber is changed to the first pressure range, the pressure in the process chamber is changed to the first pressure range without being maintained at the second pressure range, and when the pressure in the process chamber is changed to the second pressure range, the pressure in the process chamber is changed to the second pressure range without being maintained at the first pressure range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.