Methods of fabricating FinFET semiconductor devices including dummy structures
US9653363B2 · kind B2 · utility
1Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2016 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | May 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.