Anisotropic conductive film structures
US9653425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Aug 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Anisotropic conductive film (ACF) structures and manufacturing methods for forming the same are described. The manufacturing methods include preventing clusters of conductive particles from forming between adjacent bonding pads and that are associated with electrical shorting of ACF structures. In some embodiments, the methods involve use of multiple layered ACF materials that include a non-electrically conductive layer that reduces the likelihood of formation of conductive particle clusters between bonding pads. In some embodiment, the methods include the use of ultraviolet sensitive ACF material combined with lithography techniques that eliminate conductive particles from between neighboring bonding pads. In some embodiments, the methods involve the use of insulation spacers that block conductive particles from entering between bonding pads. Any suitable combination of the described methods can be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.