Semiconductor devices having stacked structures and methods for fabricating the same
US9653430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Dec 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having stacked structures and methods for fabricating the same are provided. A semiconductor device includes at least one single block including a first semiconductor chip and a second semiconductor chip stacked thereon. Each of the first and second semiconductor chips includes a semiconductor substrate including a through-electrode, a circuit layer on a front surface of the semiconductor substrate, and a front pad that is provided in the circuit layer and is electrically connected to the through-electrode. The surfaces of the semiconductor substrates face each other. The circuit layers directly contact each other such that the semiconductor chips are bonded to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.