Monolithic integration of a III-V optoelectronic device, a filter and a driving circuit
US9653441B1 · kind B1 · utility
5Cited by
8References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 20, 2016 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Jun 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming an opening extending through a (100) silicon layer and a buried insulator layer and into a (111) silicon layer of a semiconductor-on-insulator (SOI) substrate, a light-emitting element is formed within the opening. A portion of the (111) silicon layer located beneath the light-emitting element is patterned to form a patterned structure for tuning light emission characteristics and enhancing efficiency of the light-emitting element. Next, at least one field effect transistor (FET) is formed on the (100) silicon layer for driving the light-emitting element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.