Semiconductor device, method of fabricating the semiconductor device, and method of forming epitaxial layer
US9653472B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
Abstract
According to example embodiments, a method of fabricating a semiconductor device includes alternately stacking interlayer insulating layers and intermediate layers on a substrate, forming openings passing through the interlayer insulating layers and the intermediate layers to form recessed regions in the substrate, forming first epitaxial layers on recessed surfaces in the recessed regions, and forming second epitaxial layers using the first epitaxial layers as seed layers. The second epitaxial layers fill the recessed regions and extend above the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.