Image sensor and image processing system including the same
US9653503B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Jun 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.