Semiconductor light emitting device and semiconductor light emitting apparatus including the same
US9653515B2 · kind B2 · utility
7Cited by
39References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2014 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Dec 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A semiconductor light emitting device includes a substrate; a light emitting structure and a Zener diode structure disposed to be spaced apart from each other on the substrate, and including a first semiconductor layer and a second semiconductor layer, respectively; and a common, integrally formed, electrode electrically connected to the first semiconductor layer of the light emitting structure and the second semiconductor layer of the Zener diode structure. At least a portion of the Zener diode formed by the Zener diode structure is disposed below the common electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.