Amplifier device comprising enhanced thermal transfer and structural features
US9653586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Aug 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heterojunction bipolar transistor (HBT) amplifier device includes transistor fingers arranged in parallel on a substrate. Each transistor finger includes a base/collector mesa stripe shaving a trapezoidal shaped cross-section with sloping sides, and having a base stacked on a collector; a set of emitter mesa stripes arranged on the base/collector mesa stripe; and emitter metallization formed over the set of emitter mesa stripes and the base/collector mesa. The emitter metallization includes a center portion for providing electrical and thermal connectivity to the emitter mesa stripes and extended portions extending beyond the base and overlapping onto the sloping sides of the base/collector mesa stripe for increasing thermal coupling to the collector. A common conductive pillar is formed over the transistor fingers for providing electrical and thermal conductivity. Also, thermal shunts are disposed on the substrate between adjacent transistor fingers, where the thermal shunts are electrically isolated from the transistor fingers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.