Semiconductor device
US9653620B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Nov 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.