Surface emitting semiconductor laser device
US9653883B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Mar 10, 2016 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Mar 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34353
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a surface emitting semiconductor laser including: a substrate; and a semiconductor layer including: a first semiconductor multilayer film having plural sets of specific layers, a second semiconductor multilayer film having plural sets of specific layers, and an active layer provided between them, so as to constitute a resonator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.