Patent · US Active

Method for fabricating suspended MEMS structures

US9656859B2 · kind B2 · utility

2Cited by
1References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 16, 2015
Grant dateMay 23, 2017
Priority date
Expiry dateJun 29, 2035

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2201/0177
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.