Single-crystal growth apparatus
US9657411B2 · kind B2 · utility
0Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2013 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Feb 5, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a single-crystal growth apparatus including a chamber, a crucible provided in the chamber and configured to accommodate a melt that is a raw material for single-crystal growth, a heater disposed between the crucible and a side wall of the chamber and heating the crucible, and a crucible screen disposed on an upper end of the crucible, and the crucible screen has a bending member reflecting a radiant heat generated from the melt in the crucible to inside wall of the crucible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.