Load sensor using vertical transistor
US9658121B2 · kind B2 · utility
2Cited by
1References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 30, 2014 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Jul 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/491
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.