Method of manufacturing semiconductor device
US9660046B2 · kind B2 · utility
1Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Jan 9, 2014 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Jan 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A method of manufacturing a semiconductor device includes: forming a first trench in a first area of a drift layer that has a surface including the first area and a second area; growing a crystal of a p-type base layer on a surface of the drift layer after forming the first trench; and growing a crystal of an n-type source layer on a surface of the base layer. Material of the drift layer, the base layer, and the source layer are a wide-gap semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.