Semiconductor device
US9660071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2016 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Mar 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a conductive layer, a gate electrode, and a first electrode. The conductive layer includes a first portion, a second portion, and a third portion. The first portion is surrounded by the first semiconductor region via a first insulating portion. The second portion extends in a second direction, is provided on the first semiconductor region, and is provided on the second region. The third portion is connected between the first portion and the second portion and extends in a third direction. The first electrode is electrically connected to the third semiconductor region and the conductive layer. The second portion electrically connects the first electrode to the third portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.