Transistor with multilayer film including oxide semiconductor layer and oxide layer
US9660093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2013 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Oct 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.