Sputtering target and method for producing same
US9660127B2 · kind B2 · utility
1Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Apr 24, 2012 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided are a sputtering target that is capable of forming a Cu—Ga film, which has an added Ga concentration of 1 to 40 at % and into which Na is well added, by a sputtering method and a method for producing the sputtering target. The sputtering target has a component composition that contains 1 to 40 at % of Ga, 0.05 to 2 at % of Na as metal element components other than F, S and Se, and the balance composed of Cu and unavoidable impurities. The sputtering target contains Na in at least one form selected from among sodium fluoride, sodium sulfide, and sodium selenide, and has a content of oxygen of from 100 to 1,000 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.