Method of inspecting by-products and method of manufacturing semiconductor device using the same
US9660186B2 · kind B2 · utility
2Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2016 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Jun 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/206
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming magneto tunnel layers, forming a hard mask on the magneto tunnel layers, etching the magneto tunnel layers to form a magneto tunnel junction, wherein etching by-products are formed on sidewalls of the magneto tunnel junction, performing chemical treatment on the etching by-products to convert the etching by-products into a chemical reactant; and inspecting the chemical reactant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.