Situ grown SiC coatings on carbon materials
US9663374B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Apr 20, 2012 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Nov 19, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of forming a β-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC material or a SiC coating on a substrate. Also disclosed is the related SiC material or coating prepared by this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.