Spin-orbit torque magnetic random access memory and method of writing the same
US9666256B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Dec 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An SOT-MRAM comprises a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer. The magnetic free layer includes a first metal film exhibiting ferromagnetic characteristics, and a second metal film for generating a spin-Hall effect. The first metal film has a thickness sufficient to allow the magnetic free layer, after being applied with a first external magnetic field which is subsequently removed, to have a magnetization ratio ranging from −0.9 to 0.9. The first metal film, upon being applied with a second external magnetic field and an electric pulse, has multiple magnetic domains when a current density resulting from the electric pulse is greater than a critical value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.