Ion implantation apparatus and control method for ion implantation apparatus
US9666413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2015 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Jun 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.