Method for manufacturing semiconductor device
US9666437B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 8, 2015 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Oct 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device including a semiconductor chip having a front surface electrode and a rear surface electrode provided on a front surface and a rear surface, respectively, the method includes a front surface electrode layer forming step of forming a front surface electrode layer as the front surface electrode on a front surface of a semiconductor wafer forming the semiconductor chip; a thinning step of grinding a rear surface of the semiconductor wafer to reduce a thickness of the semiconductor wafer after the front surface electrode layer forming step; a plating step of forming an electrode plating film as the front surface electrode on a surface of the front surface electrode layer after the thinning step; and a rear surface electrode forming step of forming the rear surface electrode on the ground rear surface of the semiconductor wafer after the plating step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.