Thin-film transistor substrate and method of manufacturing the thin-film transistor substrate
US9666602B2 · kind B2 · utility
7Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Aug 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.