Semiconductor device
US9666664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2015 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Mar 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
Abstract
An object is to achieve an increase in gain by reducing a current collapse, and reducing Cgd and Rg. A semiconductor device according to the present invention includes a substrate; a first semiconductor layer disposed on the substrate and made of a Group III nitride semiconductor; a second semiconductor layer disposed on the first semiconductor layer and made of a Group III nitride semiconductor; a gate electrode, a source electrode, and a drain electrode disposed on the second semiconductor layer; a first field plate electrode disposed on the second semiconductor layer; and a second field plate electrode disposed on the first field plate electrode, in which the first field plate electrode and the second field plate electrode are disposed between the gate electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.