Silicon carbide semiconductor device and method for manufacturing same
US9666681B2 · kind B2 · utility
0Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2014 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Feb 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench has first to third side surfaces respectively constituted of first to third semiconductor layers. A first side wall portion included in a first insulating film has first to third regions respectively located on the first to third side surfaces. A second insulating film has a second side wall portion located on the first side wall portion. The second side wall portion has one end and the other end, the one end being connected to the second bottom portion of the second insulating film, the other end being located on one of the first and second regions, the other end being separated from the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.