Nitride semiconductor light emitting device and method of fabricating the same

US9666753B2 · kind B2 · utility

Assignee

• MEIJO UNIVERSITY · JP

Inventors

• Tetsuya Takeuchi · Yokohama, JP
• Daisuke Komori · Nagoya, JP
• Kaku Takarabe · Nagoya, JP
• Motoaki Iwaya · Nagoya, JP
• Isamu Akasaki · Nagoya, JP

Key dates

• Filing date: Apr 8, 2016
• Grant date: May 30, 2017
• Expiry date: Apr 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/815

Abstract

A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. Antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1% and is less than 1%. A concentration of an n-type impurity in the n-type semiconductor layer is lower than an electron concentration.