Method for producing light emitting semiconductor device
US9666758B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Jun 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8512
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Method for producing a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.