Growth substrate, nitride semiconductor device and method of manufacturing the same
US9666759B2 · kind B2 · utility
2Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Feb 19, 2014 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Feb 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing a light emitting device. More particularly, disclosed are a growth substrate, a nitride semiconductor device and a method of manufacturing a light emitting device. The method includes preparing a growth substrate including a metal substrate, forming a semiconductor structure including a nitride-based semiconductor on the growth substrate, providing a support structure on the semiconductor structure, and separating the growth substrate from the semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.