Semiconductor light emitting diode chip with current extension layer and graphical current extension layers
US9666779B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2014 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Mar 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A semiconductor light emitting diode chip relates to the field of production technologies of a light emitting diode. In the present invention, corresponding graphical current extension layers are respectively disposed below an N pad and a P pad, and in all light emitting compound areas, there is electronic compound light emitting. Compared with the prior art, an area of a light emitting compound area is increased, which can effectively improve current distribution and light emitting brightness of a chip. In addition, graphical current extension can effectively increase an adhesion of a pad on a surface and improve the reliability of a chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.