Method for making phase change memory cell

US9666796B2 · kind B2 · utility

Assignees

• TSINGHUA UNIVERSITY · CN
• HON HAI PRECISION INDUSTRY CO., LTD. · TW

Inventors

• Peng Liu · Beijing, CN
• Yang Wu · Huzhou City, CN
• Qun Li · Beijing, CN
• Kai-Li Jiang · Beijing, CN
• Jia-Ping Wang · Beijing, CN
• Shou-Shan Fan · Beijing, CN

Key dates

• Filing date: Aug 31, 2016
• Grant date: May 30, 2017
• Expiry date: Aug 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A method for making phase change memory cell includes following steps. A carbon nanotube wire is located on a surface of the substrate, wherein the carbon nanotube wire includes a first end and a second end opposite to the first end. A bending portion is formed by bending the carbon nanotube wire. A first electrode, a second electrode, and a third electrode are applied on the surface of the substrate, wherein the first electrode is electrically connected to the first end, the second electrode is electrically connected to the second end, and the third end is spaced from the bending portion of the carbon nanotube wire. A phase change layer is deposited to cover the bending structure and electrically connects to the third electrode.