Photoresist employing photodimerization chemistry and method for manufacturing organic light emitting diode display using the same
US9666802B2 · kind B2 · utility
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Key dates
| Filing date | Aug 19, 2015 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Aug 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/151
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A highly fluorinated photoresist employing a photodimerization chemistry and a method for manufacturing an organic light emitting diode display using the same. The photoresist includes a copolymer that is made from two different monomers. When the copolymer is used as a photoresist, the photoresist has the characteristic that it becomes insoluble when exposed to an ultraviolet light having a wavelength of 365 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.