Light-emitting device and manufacturing method thereof
US9666820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2013 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Mar 3, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.