Integrated hall effect sensor with a biased buried electrode
US9671473B2 · kind B2 · utility
1Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2014 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Aug 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The generation of a Hall voltage within a semiconductor film of an integrated Hall effect sensor uses the flow of a current within the semiconductor film when subjected to a magnetic field. The film is disposed on top of an insulating layer, referred to as buried layer, which is itself disposed on top of a carrier substrate containing a buried electrode that is situated under the insulating layer. A biasing voltage is applied to the buried electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.