Data storage having recovery function for threshold voltage distribution change of memory cells due to applying surface mounting technology and operating method
US9671969B2 · kind B2 · utility
4Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Jul 8, 2016 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.