Integrated circuit manufacture using direct write lithography
US9672316B2 · kind B2 · utility
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4References
19Claims
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Key dates
| Filing date | Jul 17, 2013 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Jul 18, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/18
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuits are manufactured using a direct write lithography step to at least partially form at least one layer within the integrated circuit. The performance characteristics of an at least partially formed integrated circuit are measured and then the layout design to be applied with a direct write lithography step is varied in dependence upon those performance characteristics. Accordingly, the performance of an individual integrated circuit, wafer of integrated circuits or batch of wafers may be altered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.