Patent · US Active

Semiconductor device

US9673214B2 · kind B2 · utility

4Cited by
4References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 16, 2016
Grant dateJun 6, 2017
Priority date
Expiry dateMar 16, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B41/41
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device according to embodiments described below includes an element region and a peripheral region. The element region is disposed on a substrate and semiconductor elements are collocated in the element region. The peripheral region is disposed on the substrate and surrounds the element region. The element region extends in a first direction parallel to the substrate and includes a plurality of wiring layers laminated on the substrate. The peripheral region includes a peripheral layer arranged to surround the element region. The peripheral layer includes a first part extending in the first direction and a second part extending in a second direction intersecting the first direction. The cross-section structures of the first part and the second part are different from one another.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.