Integrated capacitor comprising an electrically insulating layer made of an amorphous perovskite-type material and manufacturing process
US9673269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2011 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Sep 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.