Semiconductor device, inverter circuit, driving device, vehicle, and elevator
US9673315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2016 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Feb 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to the embodiments includes a SiC layer having a first plane, an insulating layer, and a region between the first plane and the insulating layer, the region including at least one element in the group consisting of Be (beryllium), Mg (magnesium), Ca (calcium), Sr (strontium), and Ba (barium), a full width at half maximum of a concentration peak of the element being equal to or less than 1 nm, and when a first area density being an area density of Si (silicon) and C (carbon) including a bond which does not bond with any of Si and C in the SiC layer at the first plane and a second area density being an area density of the element, the second area density being equal to or less than ½ of the first area density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.