Photovoltaic devices with fine-line metallization and methods for manufacture
US9673341B2 · kind B2 · utility
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39References
15Claims
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Key dates
| Filing date | May 8, 2015 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | May 8, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.