Patent · US Active

Semiconductor component and process for fabricating a semiconductor component

US9673350B2 · kind B2 · utility

1Cited by

4References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Francois Boulard · Grenoble, FR
Olivier Gravrand · Saint-Égrève, FR

Key dates

Filing date	Aug 12, 2013
Grant date	Jun 6, 2017
Priority date	—
Expiry date	Aug 12, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/809
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.